郭炜，研究员，博士生导师。中国科学院宁波材料所光电信息实验室副主任。入选国家高层次青年人才计划、浙江省人才计划等。博士毕业于美国北卡罗来纳州立大学，曾担任美国应用材料有限公司研发工程师。长期从事第三代半导体（III族氮化物）材料与器件的研究。主持了国家自然科学基金区域创新联合基金、面上基金、浙江省杰青、中科院科研仪器设备研制项目等课题。目前在领域权威期刊上发表论文100余篇、引用3000余次、授权发明专利20项，应邀在全国宽禁带半导体会议、全国MOCVD学术会议等多个国际会议中作邀请报告，担任第三代半导体联盟紫外专委会会员、《Information & Functional Materials》等期刊青年编委。

研究方向：

氮化物宽禁带、超宽禁带半导体材料外延

AlGaN紫外光电子器件

GaN功率器件及集成

代表论文：

1. Al2O3/in-situ GaON gate dielectrics incorporated GaN MIS-HEMTs with stable VTH and significantly reduced interface state density, T Luo, S Chen, J Li, F Ye, Z Yu, W Xu, J Ye*, W Guo*, Applied Physics Letters, 126, 063503 (2025)
2. Performance enhancement in AlGaN deep ultraviolet light-emitting diodes with step doping n-AlGaN contact layer, Q Chen, Y Wei, J Gao, G Gao, H Liu, M Lou, S Qi, J Ye*, and W Guo*, Optics Express, 33, 5040 (2025)
3. Influence of Growth Rate on Epitaxy of High-Al-content AlGaN via Metal Organic Chemical Vapor Deposition, C Chen, Q Chen, J Gao, C Xu, F Ye, G Gao, L Chen, J Ye*, W Guo*, Journal of Alloys and Compounds 1013, 178597 (2025)
4. Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films, L Deng, F Meng, J Li, F Ye, W Guo*, J Ye*, Journal of Alloys and Compounds, 997, 174997 (2024)
5. Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition, Q Chen, J Gao, C Chen, F Ye, G Gao, C Xu, L Chen, J Ye,* and W Guo*, Crystal Growth & Design, 24, 1784 (2024)
6. Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages, Y Dai, Z Zhao, T Luo, Z Yu, W Guo*, J Ye*, Applied Physics Letters, 123, 252110 (2023)
7. 193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED, C Xu, K Liu, Z Yu, Z Zhao, C Chen, J Gao; Z Yang, J Ye*, W Guo*, Applied Physics Letters, 123, 182103 (2023)
8. Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation, C Guo, J Zhang, S Xia, L Deng, K Liu, Z Yang, B Cheng, B Sarkar, W Guo*, and J Ye, Optics Letters 48,4769 (2023)
9. A distinctive architecture design of lateral pn type GaN ultraviolet photodetectors via a numerical simulation, S Xia, B Li, Z Yang*, W Guo*, and J Ye*, Journal of Physics D: Applied Physics 56, 345105 (2023)
10. Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing, W Guo, L Chen, H Xu, Q Chen, K Liu, T Luo, J Jiang, H Wu, G Chen, H Lu, J Ye*, Crystal Growth and Design, 23, 229 (2022)
11. Implementation of electron restriction layer in n-AlGaN toward balanced carrier distribution in deep ultraviolet light-emitting-diodes, K Liu, L Chen, T Luo, Z Zhao, P Ouyang, J Zhang, Q Chen, B Zhou, S Qi, H Xu, Z Yang, W Guo*, and J Ye*, Applied Physics Letters 121, 241105 (2022)
12. Polarization modulation of 2DEG toward plasma-damage-free GaN HEMT isolation, Y Dai, W Guo*, L Chen, H Xu, F AlQatari,C Guo, X Peng, K Tang, C Liao, X Li*, and J Ye*, Applied Physics Letters, 121, 012104 (2022)
13. Conductive SiO2/HfO2 distributed Bragg reflector achieved by electrical breakdown and its application in GaN-based light emitters, M Cui#, C Guo#, Z Yang, L Chen, Y Dai, H Xu, W Guo*, and J Ye*, Journal of Applied Physics, 131, 045301 (2022)
14. Structural and optical properties of AlN sputtering deposited on sapphire substrates with various orientations, X Peng#, J Sun#, H Liu, L Li, Q K Wang, L Wu, W Guo*, F Meng*, L Chen, F Huang, and J C Ye*, Journal of Semiconductors, 43, 022801 (2022)
15. Self-powered ultraviolet MSM photodetectors with high responsivity enabled by a lateral n+/n- homojunction from opposite polarity domains, C Guo, W Guo,* Y Dai, H Xu, L Chen, D Wang, X Peng, K Tang, H Sun, J Ye, Optics Letters, 46, 3203 (2021)
16. Annihilation and Regeneration of Defects in (1122) Semipolar AlN via High-Temperature Annealing and MOVPE Regrowth. L Chen, W Lin, H Chen, H Xu, C Guo, Z Liu, J Yan, J Sun, H Liu, J Wu, W Guo,* J Kang,* and J Ye*, Crystal Growth & Design, 21, 2911 (2021)
17. Direct demonstration of carrier distribution and recombination within step-bunched UV LED, H Xu, J Jiang, L Chen, J Hoo, L Yan, S Guo, C Shen, Y Wei, H Shao, Z Zhang, W Guo*, J Ye*, Photonics Research, 9, 764 (2021)
18. Carrier localization and defect-insensitive optical behaviors of ultraviolet multiple quantum wells grown on patterned AlN nucleation layer, L Chen, Y Dai, L Li, J Jiang, H Xu, K Li, T Ng, M Cui, W Guo*, H Sun*, and J Ye*, Journal of Alloys and Compounds, 861, 157589 (2021)
19. Polarity control and fabrication of lateral-polarity-structure of III-nitride thin films and devices: progress and prospect, W Guo, H Xu, L Chen, H Yu, J Jiang, M Sheikhi, L Li, Y Dai, M Cui, H Sun, and J Ye, Journal of Physics D: Applied Physics, 53, 483002 (2020)
20. Revealing the surface electronic structures of AlGaN deep-ultraviolet multiple quantum wells with lateral polarity domains, W Guo, L Chen, H Xu, Y Qian, M Sheikhi, J Hoo, S Guo, L Xu, J Liu, F Alqatari, X Li, K He, Z Feng, and J Ye*, Photonics Research, 8, 812 (2020)
21. Demonstration of ohmic contact using MoOx/Al on p-GaN and the proposal of a reflective electrode for AlGaN-based DUV-LEDs, L Li#, M Cui#, H Shao, Y Dai, L Chen, Z Zhang, J Hoo,  S Guo, W Lan, L Cao, H Xu, W Guo*, J Ye, Optics Letters, 45, 2427 (2020)
22. Unambiguously Enhanced Ultraviolet Luminescence of AlGaN Wavy Quantum Well Structures Grown on Large Misoriented Sapphire Substrate, H Sun, S Mitra, R Subedi, Y Zhang, W Guo*, J Ye, M Shakfa, T Ng, B Ooi, I Roqan,* Z Zhang, J Dai,* C Chen, and S Long, Advanced Functional Materials, 29, 1905445 (2019)
23. Three-dimensional band diagram in lateral polarity junction III-nitride heterostructures, W Guo, S Mitra, J Jiang, H Xu, M Sheikhi, H Sun, K Tian, Z Zhang, H Jiang, I Roqan, X Li*, J Ye*, Optica, 6, 1058 (2019)
24. Lateral-Polarity-Structure of AlGaN Quantum Wells: A Promising Approach for Enhancing the Ultraviolet Luminescence, W Guo, H Sun, B Torre, J Li, M Sheikhi, J Jiang, H Li, S Guo, K Li, R Lin, A Giugni, E Di-Fabrizio, X Li*, J Ye*, Advanced Functional Materials, 28, 1802395 (2018) 

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