郭炜，研究员，博士生导师。中国科学院宁波材料所光电信息实验室副主任。入选国家高层次青年人才计划、浙江省人才计划等。博士毕业于美国北卡罗来纳州立大学，曾担任美国应用材料有限公司研发工程师。长期从事第三代半导体（III族氮化物）材料与器件的研究。主持了国家自然科学基金区域创新联合基金、面上基金、浙江省杰青、中科院科研仪器设备研制项目等课题。目前在领域权威期刊上发表论文100余篇、引用3000余次、授权发明专利20项，应邀在全国宽禁带半导体会议、全国MOCVD学术会议等多个国际会议中作邀请报告，担任第三代半导体联盟紫外专委会会员、《Information & Functional Materials》等期刊青年编委。

研究方向：

氮化物宽禁带、超宽禁带半导体材料外延

AlGaN紫外光电子器件

GaN功率器件及集成

代表论文：

1.Al2O3/in-situ GaON gate dielectrics incorporated GaN MIS-HEMTs with stable VTH and significantly reduced interface state density, T Luo, S Chen, J Li, F Ye, Z Yu, W Xu, J Ye*, W Guo*, Applied Physics Letters, 126, 063503 (2025)

2.Performance enhancement in AlGaN deep ultraviolet light-emitting diodes with step doping n-AlGaN contact layer, Q Chen, Y Wei, J Gao, G Gao, H Liu, M Lou, S Qi, J Ye*, and W Guo*, Optics Express, 33, 5040 (2025)

3.Influence of Growth Rate on Epitaxy of High-Al-content AlGaN via Metal Organic Chemical Vapor Deposition, C Chen, Q Chen, J Gao, C Xu, F Ye, G Gao, L Chen, J Ye*, W Guo*, Journal of Alloys and Compounds 1013, 178597 (2025)

4.Effects of high-temperature thermal annealing on the crystal structure and phase separation in sputtered ScAlN thin films, L Deng, F Meng, J Li, F Ye, W Guo*, J Ye*, Journal of Alloys and Compounds, 997, 174997 (2024)

5.Evolution of Dislocations and Strains in AlN Grown by High-Temperature Metal–Organic Chemical Vapor Deposition, Q Chen, J Gao, C Chen, F Ye, G Gao, C Xu, L Chen, J Ye,* and W Guo*, Crystal Growth & Design, 24, 1784 (2024)

6.Lateral polarity controlled quasi-vertical GaN Schottky barrier diode with sidewalls absence of plasma damages, Y Dai, Z Zhao, T Luo, Z Yu, W Guo*, J Ye*, Applied Physics Letters, 123, 252110 (2023)

7.193 nm laser annealing on p-GaN with enhanced hole concentration and wall-plug-efficiency in deep ultraviolet LED, C Xu, K Liu, Z Yu, Z Zhao, C Chen, J Gao; Z Yang, J Ye*, W Guo*, Applied Physics Letters, 123, 182103 (2023)

8.Self-powered MSM solar-blind AlGaN photodetector realized by in-plane polarization modulation, C Guo, J Zhang, S Xia, L Deng, K Liu, Z Yang, B Cheng, B Sarkar, W Guo*, and J Ye, Optics Letters 48,4769 (2023)

9.A distinctive architecture design of lateral pn type GaN ultraviolet photodetectors via a numerical simulation, S Xia, B Li, Z Yang*, W Guo*, and J Ye*, Journal of Physics D: Applied Physics 56, 345105 (2023)

10.Annihilation of Nanoscale Inversion Domains in Nitrogen-Polar AlN under High-Temperature Annealing, W Guo, L Chen, H Xu, Q Chen, K Liu, T Luo, J Jiang, H Wu, G Chen, H Lu, J Ye*, Crystal Growth and Design, 23, 229 (2022)

相关信息
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